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About this Engineering article
Investigation of impact of post-metallization annealing on reliability of 65nm NOR floating-gate flash memories by Chiu, Shengfen; Xu, Yue; Ji, Xiaoli; Yan, Feng is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chiu, Shengfen; Xu, Yue; Ji, Xiaoli; Yan, Feng
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2016
- Language
- EN
- Field
- Engineering (Physical Sciences)