About this scholarly article

2010 International Electron Devices Meeting - Abnormal slow recovery characteristic of La-doped HfSiOx n-MOSFET bias-temperature instability by Du, G. A.; Ang, D. S.; Gu, C. J. is a scholarly article available to read on EtoBox.

Author

Du, G. A.; Ang, D. S.; Gu, C. J.

Publisher

IEEE

Published

2010

Language

EN