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About this Engineering article
Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal oxide semiconductor field-effect transistors by Kar, G S; Maikap, S; Banerjee, S K; Ray, S K is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Kar, G S; Maikap, S; Banerjee, S K; Ray, S K
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)
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