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Crossroads electronic structure of MnS, MnSe, and MnTe by S. J. Youn; B. I. Min; A. J. Freeman is a Physics and Astronomy article available to read on EtoBox.
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## Abstract By using the LDA + U method, we have investigated the electronic structure of MnB^VI^ (B^VI^ = S, Se, Te)–which are end‐point materials for wide gap semiconductors, A~1−__x__~^II^Mn~__x__~B^VI^ (A^II^ = Zn, Cd, Hg)–using parameters calculated by the so callled solid atom method. All these MnB^VI^ compoounds have semiconducting electronic structure in the antiferromagnetic phase. The character of each energy gap is on the cossroads between charge transfer type insulators and band insulators. The LDA + U method yields enhanced energy gaps and magnetic moments, as compared to those of the LDA calculation in agreement with experimental values. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- S. J. Youn; B. I. Min; A. J. Freeman
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)
- Published
- 2004
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)