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About this Engineering article

Perimeter governed minority carrier lifetimes in 4H-SiC p+n diodes measured by reverse recovery switching transient analysis by Philip G. Neudeck is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Philip G. Neudeck
Publisher
Kessinger Publishing, LLC
Published
1998
Language
EN
ISBN
9781166499808
Field
Engineering (Physical Sciences)