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Can I read Improvement of on-cell metrology using spectral imaging with TCAD modeling on EtoBox?
Improvement of on-cell metrology using spectral imaging with TCAD modeling by Byungseong Ahn; Kwangseok Lee; Jaehun Yang; Jiseong Doh; Jaehoon Jeong; Taeshin Kwag; Minseok Kim; Yeonjeong Kim; Jongchul Kim; Hyung Keun Yoo; Dae Sin Kim is a Engineering article available to read on EtoBox.
What is Improvement of on-cell metrology using spectral imaging with TCAD modeling about?
On-cell metrology based on spectral imaging (SI) with TCAD modeling is developed for measuring advanced logic devices. Spectral imaging has been adopted because it can directly measure a cell-block of logic device, which could not be achieved with the conventional methodology. One of conventional methodology, optical critical dimension (OCD), assumes that the cell-block is infinitely periodic, so that relatively large metrological site is needed. However, SI has also disadvantages, it use only one spectrum type and narrow wavelength band. To overcome such limitations, we adopt TCAD modeling by providing realizable sets of spectrum and structure. TCAD model acts as a data augmentation of structural parameter and corresponding simulation spectrum. From sufficient learning data, their correlation was successfully obtained through machine learning. With the proposed method, we could obtain both wafer-to-wafer distribution and in-wafer distribution with a good tendency in logic devices.
Who reads Improvement of on-cell metrology using spectral imaging with TCAD modeling?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Byungseong Ahn; Kwangseok Lee; Jaehun Yang; Jiseong Doh; Jaehoon Jeong; Taeshin Kwag; Minseok Kim; Yeonjeong Kim; Jongchul Kim; Hyung Keun Yoo; Dae Sin Kim
- Publisher
- Elsevier BV
- Published
- 2023
- Language
- EN
- Field
- Engineering (Physical Sciences)