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Ion implantation is the dominant method of doping semiconductors. It allows for accurate control of dose levels from 1011 to 1016 ions/cm2 and is essential for controlling transistor thresholds. However, it causes significant crystal damage and anomalous diffusion during annealing. Profiles are typically Gaussian in shape with a projected range and standard deviation determined by ion mass and energy. Heavier ions implant more shallowly than lighter ones at the same energy due to nuclear collisions. Monte C

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eni

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