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Gate hysteresis originating from atomic layer deposition of Al~2~O~3~ onto suspended carbon nanotube field‐effect transistors by Matthias Muoth; Valentin Döring; Christofer Hierold is a Physics and Astronomy article available to read on EtoBox.

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## Abstract While hysteretic effects upon gate sweeps in carbon nanotube transistors can be useful for memory devices, they may hamper the reliable readout of CNFET‐based sensors. Here, we demonstrate the use of our recent hysteresis‐free, suspended nanotube transistor fabrication method to evaluate the influence of dielectric layers on gate characteristics. The atomic layer deposition of Al~2~O~3~ induced substantial hysteresis in a previously hysteresis‐free device. The extraction of electrical device properties before and after an individual processing step provides an insight into the fundamental issue of hysteresis, which is of particular relevance for nanoscale devices with electrical field‐strength enhancement due to nanoscale dimensions. magnified image Gate hysteresis appears after atomic layer deposition of Al~2~O~3~ onto the previously hysteresis‐free carbon nanotube transistor.

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Author

Matthias Muoth; Valentin Döring; Christofer Hierold

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

2011

Language

EN

Field

Physics and Astronomy (Physical Sciences)