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About this Engineering article
Experimental Demonstration of P-channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET with High Tunneling Current and High on/off Ratio by Wang, Pei-Yu; Tsui, Bing-Yue is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Wang, Pei-Yu; Tsui, Bing-Yue
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2015
- Language
- EN
- Field
- Engineering (Physical Sciences)