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An Extended Density Matrix Model Applied to Silicon-based Terahertz Quantum Cascade Lasers by Dinh, T. V.; Valavanis, A.; Lever, L. J. M.; Ikonić, Z.; Kelsall, R. W. is a scholarly article available to read on EtoBox.

What is An Extended Density Matrix Model Applied to Silicon-based Terahertz Quantum Cascade Lasers about?

Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important in QCLs, they have never been considered in Si-based device designs. We describe a density matrix transport model that is designed to be more general than those in previous studies and to require less a priori knowlege of electronic bandstructure, allowing its use in semi-automated design procedures. The basis of the model includes all states involved in interperiod transport, and our steady-state solution extends beyond the rotating-wave approximation by including DC and counter-propagating terms. We simulate the potential performance of bound-to-continuum Ge/SiGe QCLs and find that devices with 4-5-nm-thick barriers give the highest simulated optical gain. We also examine the effects of interdiffusion between Ge and SiGe layers; we show that if it is taken into account in the design, interdiffusion lengths of up to 1.5 nm do not significantly affect the simulated device performance.

Author

Dinh, T. V.; Valavanis, A.; Lever, L. J. M.; Ikonić, Z.; Kelsall, R. W.

Published

2012

Language

EN