Can I read MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures on EtoBox?

MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures by Güsken, Nicholas A.; Rieger, Torsten; Bennemann, Benjamin; Neumann, Elmar; Lepsa, Mihail Ion; Schäpers, Thomas; Grützmacher, Detlev is a scholarly article available to read on EtoBox.

What is MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures about?

We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest for ongoing research in the fields of gateable Josephson junctions and quantum information related research. Systematic investigations of the deposition parameters suitable for metal shell growth are conducted. In case of Al, the substrate temperature, the growth rate and the shell thickness are considered. The substrate temperature as well as the angle of the impinging deposition flux are explored for Nb shells. The core-shell hybrid structures are characterized by electron microscopy and x-ray spectroscopy. Our results show that the substrate temperature is a crucial parameter in order to enable the deposition of smooth Al layers. Contrary, Nb films are less dependent on substrate temperature but strongly affected by the deposition angle. At a temperature of 200{\deg}C Nb reacts with InA

Author

Güsken, Nicholas A.; Rieger, Torsten; Bennemann, Benjamin; Neumann, Elmar; Lepsa, Mihail Ion; Schäpers, Thomas; Grützmacher, Detlev

Published

2017

Language

EN