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Purcell-Enhanced Emission from Silicon G Centers by mervekkaraman is a document available to read on EtoBox.
This study demonstrates bright Purcell-enhanced single photon emission from a silicon G center by coupling it to a nanophotonic cavity, achieving a spontaneous emission rate of 0.97 ns, the fastest reported for silicon. The enhancement results in a Purcell factor greater than 31, leading to a significant increase in emitter brightness compared to previous reports. These findings support the development of scalable quantum light sources on silicon photonic chips.
- Author
- mervekkaraman
- Language
- EN