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The DX Center in GaAsP Alloys by M. M. Ben Salem; M. A. Zaidi; M. Zazoui; J. C. Bourgoin is a Physics and Astronomy article available to read on EtoBox.

What is The DX Center in GaAsP Alloys about?

Using Deep Level Transient Spectroscopy (DLTS), we have investigated the properties of the DX center in GaAsP for the whole range of alloy composition x. We have determined the variation of the defect characteristics (thermal ionization energy E i , barrier for electron capture B, and energy level location E DX ) versus x. From the relationship that exists between E i , B and E DX , and between B and D, the energy difference between the L band and the bottom of the conduction band, we deduce that electron emission and capture occur from and to the DX center via the L band in the same fashion as in GaAlAs alloys. A good fit of the variation of E i and B versus x is obtained in a model where the DX level is a donor state associated with the L band which is 200 meV deep, like in GaAlAs, as a result of intervalley mixing.

Who reads The DX Center in GaAsP Alloys?

Author

M. M. Ben Salem; M. A. Zaidi; M. Zazoui; J. C. Bourgoin

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

1998

Language

EN

Field

Physics and Astronomy (Physical Sciences)