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Lithographic Quantum Dot for Sensitive Infrared Photon Detection by Zhenghua An; Takeji Ueda; Susumu Komiyama; Kazuhiko Hirakawa; Xuechu Shen is a Engineering article available to read on EtoBox.

What is Lithographic Quantum Dot for Sensitive Infrared Photon Detection about?

## Abstract Semiconductor quantum dots (QDs) with discrete energy levels provide a promising solution for infrared photon detection. A lithographically defined QD with split conduction subbands has been utilized as a photo‐active floating gate in a phototransistor structure. Electrons inside the QD are excited by incident infrared photons via intersubband transition and thereby tunnel out of the QD, lowering its electrostatic potential. As a consequence, photo‐signal arises as an electrical current increment in the phototransistor channel. It has been found that this though simple scheme exhibits a high sensitivity which is sufficient for detecting individual infrared photons (λ ∼ 14 μm). With continuous detection operation, more electrons are driven out of the QD. Eventually, the system approaches saturation due to over‐bended energy band profiles, therefore degrading the photo‐sensitivity. To alleviate this photo‐saturation effect, the QD electrostatic potential is controlled through a tuneable electrostatic potential barrier. Under illumination, the interplay between photo‐excitation and the potential barrier justifies the QD charge states, electrostatic potential and hence the

Who reads Lithographic Quantum Dot for Sensitive Infrared Photon Detection?

Author

Zhenghua An; Takeji Ueda; Susumu Komiyama; Kazuhiko Hirakawa; Xuechu Shen

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2009

Language

EN

Field

Engineering (Physical Sciences)