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Growth of spatially ordered InAs quantum dots on step-bunched vicinal GaAs (1 0 0) substrates by F. Poser; A. Bhattacharya; S. Weeke; W. Richter is a Engineering article available to read on EtoBox.
What is Growth of spatially ordered InAs quantum dots on step-bunched vicinal GaAs (1 0 0) substrates about?
Spatially ordered growth of InAs quantum dots (QD) was demonstrated via metalorganic vapour phase epitaxy on step-bunched vicinal GaAs substrates. Regular terraces of step-bunched surfaces were achieved by growing on GaAs (1 0 0) substrates off-oriented 21, 41 and 61 towards the /1 1 0S and /1 1 1S directions, thus serving as in situ templates for the growth of the QD layer. Multilayer stacks of strain-aligned QDs were successfully grown to improve the size homogeneity and therefore optoelectronic properties. Furthermore, the possibility of fabricating laterally ordered quantum wires (QWR) in the same manner was shown.
Who reads Growth of spatially ordered InAs quantum dots on step-bunched vicinal GaAs (1 0 0) substrates?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- F. Poser; A. Bhattacharya; S. Weeke; W. Richter
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2003
- Language
- EN
- Field
- Engineering (Physical Sciences)