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High optical quality ZnO epilayers grown on sapphire substrates by reactive magnetron sputtering of zinc target by Sukhvinder Singh; Ravi Kumar; Tapas Ganguli; R.S. Srinivasa; S.S. Major is a Engineering article available to read on EtoBox.
What is High optical quality ZnO epilayers grown on sapphire substrates by reactive magnetron sputtering of zinc target about?
Zinc oxide (ZnO) epilayers were grown on (0 0 0 1) sapphire substrates by reactive sputtering of a zinc target at substrate temperatures of 300 and 600 1C. High-resolution X-ray diffraction, UV-visible and photoluminescence (PL) measurements were carried out to obtain information about epitaxy, microstructure and optically active defects in these epilayers. Though the epilayer deposited at 600 1C showed a slightly smaller crystallite size along the growth direction as compared to that deposited at 300 1C, it was much superior in terms of other micro-structural parameters. It exhibited significantly small values of micro-strain (2 Â 10 À4 ), rocking curve width ($0.131), mosaic twist (0.351), and screw (6.6 Â 10 8 cm À2 )-and edge (2.9 Â 10 11 cm À2 )-type dislocation densities. Absorption and PL studies showed the high optical quality of the ZnO epilayer deposited at 600 1C, which exhibited a narrow (full-width at half-maximum-FWHM$96 meV) and intense band edge luminescence at room temperature. The micro-structural parameters and the sharp PL peak show that the reactively sputtered ZnO epilayer grown at 600 1C is comparable in epitaxial and optical quality with ZnO grown by other e
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- Author
- Sukhvinder Singh; Ravi Kumar; Tapas Ganguli; R.S. Srinivasa; S.S. Major
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2008
- Language
- EN
- Field
- Engineering (Physical Sciences)
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