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About this Engineering article
Mechanism of Low Temperature Oxidation of 4H-SiC by Nitric Acid Vapor Oxidation Method at 600°C by Matsumoto, Taketoshi; Joe, Hye-Suk; Kobayashi, Hikaru is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Matsumoto, Taketoshi; Joe, Hye-Suk; Kobayashi, Hikaru
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 2162-8769)
- Published
- 2017
- Field
- Engineering (Physical Sciences)
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