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BA2N3 Monolayers: 2D Polar Semiconductors by xingtang099 is a document available to read on EtoBox.
The study investigates BA2 N3 monolayers (A = Si, Ge), which are novel 2D polar semiconductors formed by intercalating a hexagonal boron nitride layer between two AN layers. These monolayers exhibit strain-tunable electronic properties, strong optical absorption in the deep ultraviolet range, and significant piezoelectricity due to intercalation-induced centrosymmetry breaking. The findings highlight the potential of BA2 N3 for applications in multifunctional devices, including water-splitting and strain-se
- Author
- xingtang099
- Language
- EN