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About this Engineering article
Low threshold, compressively-strained InAsP/InGaAsP and strain-compensated InAsP/InGaP 1.3 [micro sign]m lasers grown by gas source molecular beam epitaxy by Uenohara, H.; Gokhale, M.R.; Dries, J.C.; Forrest, S.R. is a Engineering article available to read on EtoBox.
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- Author
- Uenohara, H.; Gokhale, M.R.; Dries, J.C.; Forrest, S.R.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 1997
- Language
- EN
- Field
- Engineering (Physical Sciences)
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