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Electrical characterization of true Silicon-On-Nothing MOSFETs fabricated by Si layer transfer over a pre-etched cavity by V. Kilchytska; T.M. Chung; B. Olbrechts; Ya. Vovk; J.-P. Raskin; D. Flandre is a Engineering article available to read on EtoBox.

What is Electrical characterization of true Silicon-On-Nothing MOSFETs fabricated by Si layer transfer over a pre-etched cavity about?

In this paper, ''true'' Silicon-On-Nothing (SON) MOSFETs fabricated by a new technique, consisting in Si layer transfer over a preetched cavity, are investigated. The process has no potential limitation with regards to the device dimensions as well as to the thicknesses of Si film and so-called ''nothing'' layers. Comparing to single-gate (SG) fully-depleted (FD) SOI MOSFETs fabricated on the same wafer, improved electrical characteristics of SON MOSFETs are demonstrated. Self-heating effect, which can be considered as the main drawback of SON devices, is experimentally addressed for the first time. Finally, the source-to-drain coupling through the substrate is demonstrated to be practically suppressed in such device architecture.

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Author

V. Kilchytska; T.M. Chung; B. Olbrechts; Ya. Vovk; J.-P. Raskin; D. Flandre

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

2007

Language

EN

Field

Engineering (Physical Sciences)