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Simulation of novel complementary bipolar inverters for low-voltage high-speed ULSI by Alexander N. Bubennikov; Andrey V. Zykov is a Engineering article available to read on EtoBox.

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Complementary bipolar (CBi) inverters on scaled down self-aligned transistors with highly-doped bases for advanced high-speed low-voltage low-power deep-submicron ULSI are considered and studied using a simulator PSPICE. A novel symmetrical transistor structure (STS) with undoped (lightly-doped) active base and nanometer regime, that can function as complementary n±p±n and p±n±p devices for CBi inverters at ultra-reduced supply voltages V EE , V EE =0.1±0.5 V, is investigated and simulated. It is shown that numerical mixed 2D-device-circuit simulator (DCSIM) for personal computer gives accurate knowledge of the static and dynamic properties of upward and downward self-aligned STS and CBi inverters eliminating the intermediate nonaccurate procedure of model electrical parameter extraction. This paper presents 2D numerical device-circuit simulations of the bipolar nanostructures and push±pull inverters on complementary STS with undoped active bases in ultra-low-voltage regime providing a high degree of integration, extremely high intrinsic speed and suciently high driving capacity. The switching problems for high-speed low-power low-action operations and optimization of sub-0.5 V Cbi

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Author

Alexander N. Bubennikov; Andrey V. Zykov

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)