Can I read STI and WPE Effects on MOSFETs on EtoBox?
STI and WPE Effects on MOSFETs by Vijay Gupta is a document available to read on EtoBox.
What is STI and WPE Effects on MOSFETs about?
STI and WPE impact MOSFET performance. STI involves etching trenches outside active areas defined by oxide definition layers and filling them with silicon dioxide to provide isolation between devices. This process creates stress that changes the properties of nearby MOSFETs, known as the well proximity effect. More than one transistor can be placed inside a single active area.
- Author
- Vijay Gupta
- Language
- EN