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This document shows the relationship between the gate-source voltage (Vgs) and drain current (Id) of a MOSFET transistor. It provides a table of values showing that as Vgs increases from 0V to 2.5V, the Id also increases, reaching a maximum of around 22.8mA. For negative values of Vgs, the Id is very small but remains above 0 until Vgs drops to -2V, at which point the Id is 0.

Author

Jonathan Iturralde

Language

EN