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About this Materials Science article
Modeling of radiation-induced defect recovery in 3C-SiC under high field bias conditions by Peterson, Ricardo; Senesky, Debbie is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Peterson, Ricardo; Senesky, Debbie
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0927-0256)
- Published
- 2019
- Language
- EN
- Field
- Materials Science (Physical Sciences)