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This dissertation describes the development of a 3D simulation environment for semiconductor nanoelectronic devices where quantum effects are dominant, including the modeling of single-electron tunneling devices and quantum-ballistic transport. The simulation framework couples the simnad quantum mechanics simulator with the dessis-ise device simulator to enable the modeling of both classical dissipative currents and 3D quantum effects in the same device. The dissertation presents approaches for computing ch

Author

hamedb2

Language

EN