Can I read Rapid Thermal Annealing and Crystallization Mechanisms Study of Silicon Nanocrystal in Silicon Carbide Matrix on EtoBox?

Rapid Thermal Annealing and Crystallization Mechanisms Study of Silicon Nanocrystal in Silicon Carbide Matrix by Zhenyu Wan; Shujuan Huang; Martin A Green; Gavin Conibeer is a Materials Science article available to read on EtoBox.

What is Rapid Thermal Annealing and Crystallization Mechanisms Study of Silicon Nanocrystal in Silicon Carbide Matrix about?

In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

Who reads Rapid Thermal Annealing and Crystallization Mechanisms Study of Silicon Nanocrystal in Silicon Carbide Matrix?

Author

Zhenyu Wan; Shujuan Huang; Martin A Green; Gavin Conibeer

Publisher

Springer-Verlag; Springer (Biomed Central Ltd.); Springer Verlag; Seacaucus NJ: Springer Verlag New York, 2006-; Springer Science and Business Media LLC; Society for Mining, Metallurgy and Exploration Inc. (ISSN 1931-7573)

Published

2011

Language

EN

Field

Materials Science (Physical Sciences)