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On the Degradation Kinetics of Thin Oxide Layers by A. Scarpa; G. Pananakakis; G. Ghibaudo; A. Paccagnella; G. Ghidini is a Engineering article available to read on EtoBox.
What is On the Degradation Kinetics of Thin Oxide Layers about?
After Fowler±Nordheim stress, since SiO 2 charge trapping occurs up to ®nal dielectric breakdown, oxide layers degrade. The degradation features of very thin gate oxide ®lms have been studied, after constant current stress. Furthermore charge build up in the oxide bulk and in the anodic/cathodic oxide regions has been investigated. For oxides thicker than 5 nm it was possible to provide a physical interpretation of the experimental results, showing a power law of charge trapping kinetics as a function of stress level. For thinner oxides, it has been shown that the degradation mechanisms can be very dierent and the proposed interpretation is no longer valid.
Who reads On the Degradation Kinetics of Thin Oxide Layers?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- A. Scarpa; G. Pananakakis; G. Ghibaudo; A. Paccagnella; G. Ghidini
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 1999
- Language
- EN
- Field
- Engineering (Physical Sciences)