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About this Materials Science article
Side-gated, enhancement mode, InAs nanowire double quantum dot devices—toward controlling transverse electric fields in spin-transport measurements by Dorsch, Sven; Dalelkhan, Bekmurat; Fahlvik, Sofia; Burke, Adam is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Dorsch, Sven; Dalelkhan, Bekmurat; Fahlvik, Sofia; Burke, Adam
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0957-4484)
- Published
- 2019
- Field
- Materials Science (Physical Sciences)
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