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2SK2765 N-channel MOS-FET Datasheet by Diệp Ngọc Phạm is a document available to read on EtoBox.

This document provides specifications for an N-channel MOSFET transistor. It lists key features such as high speed switching, low on-resistance, and the ability to withstand high voltages. The maximum ratings include an 800V drain-source voltage, 7A continuous drain current, and 125W maximum power dissipation. Electrical characteristics are provided such as a typical on-resistance of 2 ohms and forward transconductance of 4 Siemens. Thermal and switching time characteristics are also specified. Graphs illus

Author
Diệp Ngọc Phạm
Language
EN