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Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge+SiO2 system by W.K Choi; V Ng; Y.W Ho; S.P Ng; T.B Chen; M.B Yu; Rusli; S.F Yoon; B.A Cheong; G.L Chen is a Engineering article available to read on EtoBox.

What is Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge+SiO2 system about?

Raman and photoluminescence PL results of Ge nanocrystals prepared from co-sputtered Ge q SiO samples under rapid-thermal 2 ## Ž . annealling RTA with different annealing conditions are presented. The Raman results showed a transition from amorphous to nanocrystalline Ge when the samples were annealed at a temperature higher than 700 8C for longer than 300 s. The Raman spectrum of sample annealed at 1000 8C is very similar to that of the as-deposited amorphous sample. However, when the annealing duration is reduced to less than 50 s, clear Raman signals can be seen for samples annealed at 1000 8C. Transmission electron micrographs showed that uniform Ge nanocrystals were obtained for samples annealed at 800 8C for 300 s or 1000 8C for 50 s, and nanocrystals with multiple Ž . Ž . twinned structure of diameter ; 200 A were observed near the Si-SiO interface 1000 8C for 300 s . PL results showed that maximum 2 intensity of the 1.9 and 3.0 eV peaks was obtained from samples annealed at 800 8C for 20 s or transiently to 1000 8C at 30 8Crs. These results suggest that a critical thermal budget is required for the formation of uniform nanocrystals and for maximum PL emission.

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Author

W.K Choi; V Ng; Y.W Ho; S.P Ng; T.B Chen; M.B Yu; Rusli; S.F Yoon; B.A Cheong; G.L Chen

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0928-4931)

Published

2001

Language

EN

Field

Engineering (Physical Sciences)