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NaOH Etching Procedure for Silicon Wafers by sayyadmannan is a document available to read on EtoBox.

The document provides instructions for performing a NaOH etch on silicon wafers. The process involves: 1) Preparing a NaOH solution by dissolving NaOH pellets in water and heating to 90 degrees Celsius. 2) Optionally dipping the wafers in HF to remove any oxide layer. 3) Immersing the wafers in the heated NaOH solution for a specified time to etch the silicon. 4) Performing a RCA2 clean using H2O, HCl and H2O2 heated to over 65 degrees Celsius to remove impurities from the NaOH etch.

Author
sayyadmannan
Language
EN