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Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD by A. Vincze; R. Lupták; K. Hušeková; E. Dobročka; K. Fröhlich is a Engineering article available to read on EtoBox.
What is Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD about?
We have studied thermal stability of GdScO 3 and LaLuO 3 films prepared by liquid injection metal-organic chemical vapour deposition (MOCVD). In the present work, we report on the characterization of LaLuO 3 and GdScO 3 thin dielectric films by SIMS and capacitance-voltage (C-V) measurements. In both GdScO 3 and LaLuO 3 films, SIMS analysis revealed the presence of a silicate interfacial layer. The C-V characteristics were found to be shifted after thermal treatment to negative and positive voltages for GdScO 3 and LaLuO 3 films, respectively. Furthermore we have observed that LaLuO 3 films exhibit C-V characteristics more stable to annealing conditions compared with GdScO 3 films.
Who reads Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- A. Vincze; R. Lupták; K. Hušeková; E. Dobročka; K. Fröhlich
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)
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