Can I read a-Si:H TFT I-V Characteristics Modeling on EtoBox?

a-Si:H TFT I-V Characteristics Modeling by aku_017 is a document available to read on EtoBox.

What is a-Si:H TFT I-V Characteristics Modeling about?

This thesis investigates the I-V characteristics of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) in the forward subthreshold operation, addressing issues of bias-induced metastability that affect long-term performance. The author derives and verifies static and dynamic models of a-Si:H TFTs, demonstrating that these devices do not experience subthreshold slope degradation or threshold voltage shift under specific conditions. Additionally, the research explores applications of a-Si:H

Author

aku_017

Language

EN