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About this Engineering article
Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy by Poblenz, C.; Mates, T.; Craven, M.; DenBaars, S. P.; Speck, J. S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Poblenz, C.; Mates, T.; Craven, M.; DenBaars, S. P.; Speck, J. S.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)
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