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1989 - CVD-W Deposition and Dry Etch Processes For Planarized Metallizations and Tungsten Interconnect Techniques by 曾昱睿 is a document available to read on EtoBox.
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The document discusses an improved tungsten (W) deposition process using hydrogen reduction of tungsten hexafluoride (WF6) in a cold wall reactor, achieving sufficient step coverage for filling contact holes. It also describes a low-pressure etch back process using SF6/O2 that eliminates local-loading effects, resulting in co-planar W plugs without residues. The study evaluates various planarization schemes for multilevel metallization, focusing on optimizing deposition and etch back processes to enhance re
- Author
- 曾昱睿
- Language
- EN