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nMOS and p-Well Fabrication in VLSI by Phanindra Reddy is a document available to read on EtoBox.

The document describes the process of nMOS fabrication and CMOS fabrication using p-well and twin-tub processes. For nMOS fabrication, a p-type silicon wafer has a thin silicon dioxide layer grown on it, then a photoresist layer and mask are used to etch areas and form the gate structure. N-type impurities are diffused into the exposed areas to form the source and drain, and metal is deposited to form interconnections. The p-well CMOS process involves diffusing a deep p-well into an n-type substrate to acco

Author

Phanindra Reddy

Language

EN