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This document summarizes research on the performance of silicon carbide (SiC) power devices under heavy-ion irradiation. It presents test results for several SiC power MOSFETs and diodes from different manufacturers, under different bias and temperature conditions. The results show degradation and failures in the SiC devices when exposed to heavy ions. This data aims to increase understanding of single-event effects in SiC power devices to enable hardening against radiation.

Author

Sansung Ace

Language

EN