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2SC5250 NPN Transistor Specifications by Ali Djeddi is a document available to read on EtoBox.
This document provides specifications for the 2SC5250 silicon NPN triple diffused planar transistor. It is a high breakdown voltage, high speed switching transistor in a TO-3PFM package suitable for use in character display horizontal deflection circuits. Key specifications include a collector-emitter breakdown voltage of 1500V, switching time of 0.2 microseconds, and an integrated damper diode for protection. Absolute maximum ratings and typical electrical characteristics are provided.
- Author
- Ali Djeddi
- Language
- EN