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Analysis of Dark Current Contributions in Mercury Cadmium Telluride Junction Diodes by V. Gopal; S.K. Singh; R.M. Mehra is a Engineering article available to read on EtoBox.

What is Analysis of Dark Current Contributions in Mercury Cadmium Telluride Junction Diodes about?

An analytical approach to analyze the dark current-voltage (I-V) and dynamic impedance vs reverse bias voltage (R d -V ) characteristics of an HgCdTe junction diode is presented in this paper. Application to the experimental data is discussed to illustrate the approach. It is shown that the relative contributions of the various dark current contributing mechanisms viz. diffusion, generation-recombination, thermal trap assisted tunneling, band-to-band tunneling, avalanche multiplication and ohmic current component can all be isolated, if present.

Who reads Analysis of Dark Current Contributions in Mercury Cadmium Telluride Junction Diodes?

It is typically read by researchers, students, and practitioners in Engineering.

Author
V. Gopal; S.K. Singh; R.M. Mehra
Publisher
Elsevier Science; Elsevier ; Elsevier BV (ISSN 1350-4495)
Published
2002
Language
EN
Field
Engineering (Physical Sciences)

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