About this document
GaN HEMT Back Barrier Trapping Insights by chongyiliang.st12 is a document available to read on EtoBox.
The document discusses the impact of back barrier (BB) trapping on the on-resistance dispersion in GaN HEMTs, highlighting that increasing the 2DEG density and inserting an intrinsic AlGaN BB can alleviate this issue. It presents experimental findings and modeling approaches to understand the mechanisms behind BB trapping and proposes solutions to mitigate its effects. The study emphasizes the challenges of downscaling HEMTs while maintaining performance and offers design criteria for improved device archit
- Author
- chongyiliang.st12
- Language
- EN