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What is ICSCRM 2025 Abstract 506 about?

This study explores avalanche stress methods for evaluating impact ionization in 4H-SiC power devices, focusing on JBS and PiN diodes with varying voltage ratings and substrates. Results indicate that different epitaxy conditions significantly affect avalanche voltage stability, with SmartSiCTM substrates showing similar performance to traditional bulk substrates. The findings suggest that devices with higher avalanche voltages exhibit less drift, emphasizing the importance of substrate and epitaxy in devic

Author

bishtkaran580

Language

EN