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Different behaviour of local tunneling conductivity for deep and shallow impurities due to Coulomb interaction by V.N. Mantsevich; N.S. Maslova is a Physics and Astronomy article available to read on EtoBox.
What is Different behaviour of local tunneling conductivity for deep and shallow impurities due to Coulomb interaction about?
Spatial distribution of local tunneling conductivity was investigated for deep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulomb interaction and interference effects were taken into account and analyzed theoretically with the help of Keldysh formalism. Two models were investigated: mean field self-consistent approach for shallow impurity state and Hubbard-I model for deep impurity state. We have found that not only above the impurity but also at the distances comparable to the lattice period both effects interference between direct and resonant tunneling channels and on-site Coulomb repulsion of localized electrons strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS).
Who reads Different behaviour of local tunneling conductivity for deep and shallow impurities due to Coulomb interaction?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- V.N. Mantsevich; N.S. Maslova
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0038-1098)
- Published
- 2010
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)