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What is Silicon N-Channel Junction FET: Application about?

This document provides information about the 2SK168 silicon N-channel junction FET including its application, outline, maximum ratings, electrical characteristics, and typical output and transfer characteristics. Key specifications include a gate-drain breakdown voltage of -30V, drain current of 4-20mA, and forward transfer admittance of 8-10mS.

Author

Elkin Lopez Pedraza

Language

EN