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Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer by Kim, Beom Yong (author);Park, Hyeon Woo (author);Hyun, Seung Dam (author);Lee, Yong Bin (author);Lee, Suk Hyun (author);Oh, Minsik (author);Ryoo, Seung Kyu (author);Lee, In Soo (author);Byun, Seungyong (author);Shim, Doosup (author);Cho, Deok‐Yong (author);Park, Min Hyuk (author);Hwang, Cheol Seong (author) is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Kim, Beom Yong (author);Park, Hyeon Woo (author);Hyun, Seung Dam (author);Lee, Yong Bin (author);Lee, Suk Hyun (author);Oh, Minsik (author);Ryoo, Seung Kyu (author);Lee, In Soo (author);Byun, Seungyong (author);Shim, Doosup (author);Cho, Deok‐Yong (author);Park, Min Hyuk (author);Hwang, Cheol Seong (author)
- Publisher
- Wiley
- Published
- 2022
- Field
- Engineering (Physical Sciences)