Can I read Chemical and Electronic Structure of Ultrathin Zirconium Oxide Films on Silicon as Determined by Photoelectron Spectroscopy on EtoBox?

Chemical and Electronic Structure of Ultrathin Zirconium Oxide Films on Silicon as Determined by Photoelectron Spectroscopy by S Miyazaki; M Narasaki; M Ogasawara; M Hirose is a Engineering article available to read on EtoBox.

What is Chemical and Electronic Structure of Ultrathin Zirconium Oxide Films on Silicon as Determined by Photoelectron Spectroscopy about?

We have measured the energy bandgaps of thermally evaporated ZrO 2 on Si(1 0 0) and a very-thin interfacial silicate (SiO x :Zr) layer formed by 500 °C annealing in dry O 2 from the onset of the energy loss spectra of O 1s photoelectrons. The valence band lineups at the interfaces among ZrO 2 , SiO x :Zr and Si(1 0 0) have also been evaluated by analyzing the valence band spectra of thin heterostructures. By combination of the measured energy bandgaps and valence band lineups, we have determined the energy band alignments of as-evaporated ZrO 2 /Si(1 0 0) and annealed ZrO 2 /SiO x :Zr/ Si(1 0 0) systems. The influence of 300-500 °C O 2 -annealing on the energy distribution of electronic defect states in the films and at the interfaces has been demonstrated by total photoelectron yield measurements.

Who reads Chemical and Electronic Structure of Ultrathin Zirconium Oxide Films on Silicon as Determined by Photoelectron Spectroscopy?

Author

S Miyazaki; M Narasaki; M Ogasawara; M Hirose

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

2002

Language

EN

Field

Engineering (Physical Sciences)