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Isotropic growth islands of Ga 0.16 In 0.84 As 0.80 Sb 0.20 epilayer grown by metalorganic chemical vapour deposition by Shuwei Li; Yixin Jin; Chunxiao Gao; Zengsun Jin is a Engineering article available to read on EtoBox.

What is Isotropic growth islands of Ga 0.16 In 0.84 As 0.80 Sb 0.20 epilayer grown by metalorganic chemical vapour deposition about?

The quaternary Gao.16Ino.s4Aso.soSbo.2o epilayer was grown on GaSb substrate by metalorganic chemical vapour deposition (MOCVD). On the epitaxial surface smooth and perfect three-dimensional islands were observed by atomic force microscopy (AFM). A good crystalline quality was characterized by single-crystal X-ray diffraction pattern and double-crystal X-ray rocking curve. When the growth rate of the growth nucleus is larger than the growth rate of the high-index facet, the mode of island growth is isotropic.

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Author

Shuwei Li; Yixin Jin; Chunxiao Gao; Zengsun Jin

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

1997

Language

EN

Field

Engineering (Physical Sciences)