About this scholarly article

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs by Anil, K.G.; Mahapatra, S.; Eisele, I. is a scholarly article available to read on EtoBox.

Author

Anil, K.G.; Mahapatra, S.; Eisele, I.

Publisher

IEEE

Published

2000