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In-Plane Epitaxial Growth of Self-Assembled Ge Nanowires on Si Substrates Patterned by a Focused Ion Beam by Marcus, I. Carmen; Berbezier, Isabelle; Ronda, Antoine; Alonso, M. Isabel; Garriga, Miquel; Goñi, Alejandro R.; Gomes, Elise; Favre, Luc; Delobbe, Anne; Sudraud, Pierre is a Materials Science article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Materials Science.

Author
Marcus, I. Carmen; Berbezier, Isabelle; Ronda, Antoine; Alonso, M. Isabel; Garriga, Miquel; Goñi, Alejandro R.; Gomes, Elise; Favre, Luc; Delobbe, Anne; Sudraud, Pierre
Publisher
American Chemical Society; American Chemical Society (ACS) (ISSN 1528-7483)
Published
2011
Language
EN
Field
Materials Science (Physical Sciences)

More by Marcus, I. Carmen; Berbezier, Isabelle; Ronda, Antoine; Alonso, M. Isabel; Garriga, Miquel; Goñi, Alejandro R.; Gomes, Elise; Favre, Luc; Delobbe, Anne; Sudraud, Pierre

Browse all works by Marcus, I. Carmen; Berbezier, Isabelle; Ronda, Antoine; Alonso, M. Isabel; Garriga, Miquel; Goñi, Alejandro R.; Gomes, Elise; Favre, Luc; Delobbe, Anne; Sudraud, Pierre