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Ovonic threshold switching behavior of Te-Ge-Se-Sc (TGSS): A rare-earth doped phase-change material by Surbhi Agarwal; D.K. Dwivedi; Pooja Lohia is a Materials Science article available to read on EtoBox.

What is Ovonic threshold switching behavior of Te-Ge-Se-Sc (TGSS): A rare-earth doped phase-change material about?

Phase change memory (PCM) is an exceptional universal memory innovation that offers qualities like fast speed and non-volatility. But major obstacle still exists in achieving better thermal stability and rapid switching at the same time. Therefore, it is crucial to investigate new materials with enhanced properties. To overcome the contrast of access time between storage systems and memories, storage class memory concept based on emerging nonvolatile memory technology has been introduced. Resistive switching has gained much awareness in last decade due to its application in PCM technologies. Investigation of resistive switching on novel Te (1-x) (GeSe 0.5 ) Sc x (x = 0, 0.05, 0.1, 0.15) quaternary alloy has been analyzed in this paper. Material has revealed electrical resistivity contrast of ~10 3 orders of magnitude that offers better thermal stability than the majority of other phase transition alloys. Additionally, current-voltage (I-V) properties and voltage dependent threshold switching support an incredibly fast threshold switching operation. Switching is observed at 18-30 V and threshold voltage has been noticed to decrease (10-12 V) with increasing temperature. From XPS stu

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Author

Surbhi Agarwal; D.K. Dwivedi; Pooja Lohia

Publisher

Elsevier BV

Published

2024

Language

EN

Field

Materials Science (Physical Sciences)