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Impact of gate recessing on DC, RF and noise parameters of 6H-SiC-based Al0.30Ga0.70N/GaN HEMT for RF and low noise applications by Shashank Kumar Dubey; Aminul Islam is a Engineering article available to read on EtoBox.

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This research work investigates the impact of gate recessing on DC, RF, and noise parameters of 6H-SiC-based Al 0.30- Ga 0.70 N/GaN HEMT. DC, RF and Noise parameters have been discussed in detail for the proposed device. The proposed HEMT exhibits good DC, RF and Noise parameters. DC parameters namely maximum drain current (I DMAX ), threshold voltage (V t ) and transconductance (g m ) have been analyzed with useful results. The simulated value of I DMAX is 927 mA/ mm and 887 mA/mm at V GS = 0 V for normal HEMT and recessed HEMT respectively. V t is -7.69 V and g m is 147 mS/ mm for normal HEMT. V t is -6.38 V and g m is 156 mS/mm for recessed HEMT. RF parameters such as cut off frequency (f T ) and maximum oscillation frequency (f MAX ) have been simulated and the observed values are suitable for Radio Frequency applications. The observed value of f T is 106 GHz and f MAX is 134 GHz for HEMT without recessing. The observed value of f T is 118 GHz and f MAX is 162 GHz for HEMT with recessing. Noise parameters, viz. minimum noise figure (NF MIN ), noise resistance (R n ) and optimum reflection coefficient (U OPT ) have been analyzed and elaborately discussed for applications of low

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Author

Shashank Kumar Dubey; Aminul Islam

Publisher

Springer Science and Business Media LLC

Published

2022

Language

EN

Field

Engineering (Physical Sciences)